JPS634945B2 - - Google Patents
Info
- Publication number
- JPS634945B2 JPS634945B2 JP57054892A JP5489282A JPS634945B2 JP S634945 B2 JPS634945 B2 JP S634945B2 JP 57054892 A JP57054892 A JP 57054892A JP 5489282 A JP5489282 A JP 5489282A JP S634945 B2 JPS634945 B2 JP S634945B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- plating
- thin film
- lead
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57054892A JPS58171838A (ja) | 1982-04-02 | 1982-04-02 | 半導体装置用リ−ドフレ−ム |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57054892A JPS58171838A (ja) | 1982-04-02 | 1982-04-02 | 半導体装置用リ−ドフレ−ム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58171838A JPS58171838A (ja) | 1983-10-08 |
JPS634945B2 true JPS634945B2 (en]) | 1988-02-01 |
Family
ID=12983241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57054892A Granted JPS58171838A (ja) | 1982-04-02 | 1982-04-02 | 半導体装置用リ−ドフレ−ム |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58171838A (en]) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8105932B2 (en) | 2004-08-19 | 2012-01-31 | Infineon Technologies Ag | Mixed wire semiconductor lead frame package |
DE102008051491A1 (de) * | 2008-10-13 | 2010-04-29 | Tyco Electronics Amp Gmbh | Leadframe für elektronische Bauelemente |
ITMI20131530A1 (it) | 2013-09-17 | 2015-03-18 | St Microelectronics Srl | Dispositivo elettronico con elemento di interfaccia bimetallico per wire-bonding |
CN106024745A (zh) * | 2016-07-01 | 2016-10-12 | 长电科技(宿迁)有限公司 | 一种半导体管脚贴装结构及其焊接方法 |
CN108493178B (zh) * | 2018-02-06 | 2020-10-20 | 昆山市品能精密电子有限公司 | 封装到位的集成电路支架结构及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52129465U (en]) * | 1976-03-26 | 1977-10-01 |
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1982
- 1982-04-02 JP JP57054892A patent/JPS58171838A/ja active Granted
Also Published As
Publication number | Publication date |
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JPS58171838A (ja) | 1983-10-08 |
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